Thermal instability effects in SiC Power MOSFETs

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast I–V Techniques

Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with thermal as-grown SiO2 and NO-annealed gate oxides have been studied using fast I–V measurements. These measurements reveal the full extent of the instability underestimated by dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. Postoxidation an...

Positive bias temperature instability of SiC-MOSFETs induced by gate-switching operation

Modeling and Characterization of 4h-sic Mosfets: High Field, High Temperature, and Transient Effects

Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC MOSFETS: HIGH FIELD, HIGH TEMPERATURE, AND TRANSIENT EFFECTS Siddharth Potbhare, Doctor of Philosophy, 2008 Directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering We present detailed physics based numerical models for characterizing 4HSilicon Carbide lateral MOSFETs and vertical power DMOSFETs for hig...

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy dur...

Li, Jianfeng and Castellazzi, Alberto and Eleffendi, Mohd Amir and Gurpinar, Emre and Johnson, Christopher Mark and Mills, Liam (2017) A physical RC network model for electro-thermal analysis of a multichip SiC power module. IEEE Transactions on Power

This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical RC network model. It was experimentally ...